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| (R) BUL1403ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED ARCING TEST SELF PROTECTED TO-220 3 1 2 s APPLICATIONS 2/4 LAMPS ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING 277 VAC PUSH-PULL CONFIGURATION DESCRIPTION The BUL1403ED is a new device, designed for fluorescent electronic ballast 277 VAC push-pull applications (up to 4 lamps). This device, it can be used without baker clamp and transil protection, reducing greatly the component count. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1400 650 11 3 6 2 4 80 -65 to 150 150 Unit V V V A A A A W o o C C September 2002 1/6 BUL1403ED THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.56 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Base-Emitter Leakage Current Test Conditions V CE = 1400 V V EB = 9 V I C = 10 mA L = 25 mH 650 Min. Typ. Max. 1 100 Unit mA A V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I E = 10 mA 11 18 V V CE(sat) V BE(sat) I C = 0.5 A I C = 0.25 A I C = 0.5 A IC = 1 A IC = 2 A I C = 5 mA I C = 0.4 A I C = 0.8 A I C = 0.5 A I B1 = 0.05 A D.C. = 2% (see figure 1) L = 2 mH V CC = 50 V (see figure 2) I B = 0.05 A I B = 0.025 A I B = 0.1 A I B = 0.1 A I B = 0.4 A V CE = 10 V V CE = 3 V V CE = 5 V V CC = 125 V I B2 = -0.25 A P.W. = 300 s C = 1.8 nF V BE = -5 V 6 18 15 4 2.5 1.5 1.0 1.1 1.2 40 V V V V V h FE td tr ts tf E ar RESISTIVE LOAD Delay Time Rise Time Storage Time Fall Time Repetitive Avalanche Energy 0.3 0.8 1.2 0.35 s s s s mJ Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/6 BUL1403ED Safe Operating Areas Derating Curve Output Characteristics DC Current Gain DC Current Gain Collector Emitter Saturation Voltage 3/6 BUL1403ED Base Emitter Saturation Voltage Reverse Biased SOA Figure 1: Resistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor Figure 2: Energy Rating Test Circuit 4/6 BUL1403ED TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 5/6 BUL1403ED Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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